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Surface-layer band gap widening in Cu(In,Ga)Se2 thin films

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Surface-layer band gap widening in Cu(In,Ga)Se2 thin films

Auteurs : RBID : Pascal:03-0519798

Descripteurs français

Pascal (Inist)
- 7320A, 7860H, 8460J, 7866L, 6837L, Etude expérimentale, Cuivre composé, Indium composé, Gallium composé, Semiconducteur ternaire, Bande interdite, Microscopie électronique transmission, Cathodoluminescence, Cellule solaire, Couche mince semiconductrice, Etat surface.

English descriptors

KwdEn :
- Cathodoluminescence, Copper compounds, Energy gap, Experimental study, Gallium compounds, Indium compounds, Semiconductor thin films, Solar cells, Surface states, Ternary semiconductors, Transmission electron microscopy.

Abstract

Transmission electron microscopy observations, cathodoluminescence spectroscopy and spectrum imaging are combined to investigate the emission spectrum in Cu(In,Ga)Se₂ (CIGS) thin films with improved spatial resolution. We report direct evidence for a surface layer of wider band gap, which forms spontaneously in CIGS films. The existence of such a surface layer is critical for attaining high efficiency in solar cells based on these chalcopyrite semiconductor compounds. © 2003 American Institute of Physics.

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Pascal:03-0519798

Le document en format XML

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<author><name sortKey="Abushama, J" uniqKey="Abushama J">J. Abushama</name>
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<front><div type="abstract" xml:lang="en">Transmission electron microscopy observations, cathodoluminescence spectroscopy and spectrum imaging are combined to investigate the emission spectrum in Cu(In,Ga)Se<sub>2</sub>
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Surface-layer band gap widening in Cu(In,Ga)Se2 thin films

Surface-layer band gap widening in Cu(In,Ga)Se2 thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri